FQI9P25 Datasheet, MOSFET, Fairchild Semiconductor

Download (Size : 573.97KB)

FQI9P25 Features and benefits

*
*
*
*
*
* -9.4A, -250V, RDS(on) = 0.62Ω @VGS = -10 V Low gate charge ( typical 29 nC) Low Crss ( typical 27 pF) Fast switching 100% avalanche te.

FQI9P25 Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

Image gallery